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Crystal Growth Furnace for Silicon Components
 
It can melt the silicon materials via the graphite resistance heater in an inert atmosphere, and then grow dislocation-free monocrystal silicon ingot (used for silicon components) though CZ method automatically. It is suitable for 24’’ ingot and compatible with superconducting magnetic field.
  • Diameter of pull chamber

    650mm

  • Capable of growing ultra-large ingot 

    26''

Large size, high quality
High precision control system
Sophisticated monitoring and feedback system & Optional magnetic field & Capable of growing  26'' ultra-large ingot used for silicon components

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